Patent · US Active

Quantum dot luminescent material an method of producing thereof

US11549057B2 · kind B2 · utility

0Cited by

0References

6Claims

0Family size

Assignee

Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. · CN

Inventors

Bo He · Albany, US
Yongwei Wu · Longbeilingcun, CN
Pei JIANG · Tainan, TW

Key dates

Filing date	Oct 23, 2019
Grant date	Jan 10, 2023
Priority date	—
Expiry date	Feb 14, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH10K2102/00
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

A quantum dot luminescent material and a method of producing thereof. The quantum dot luminescent material includes a hole injection layer, a hole transport layer, a quantum dot light emitting layer, an electron transport layer, and an electron injection layer. The quantum dot luminescent layer is located on the hole transport layer, and the quantum dot luminescent layer includes uniformly distributed perovskite nanodots.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.