Self-mixing interference device for sensing applications
US11549799B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2020 |
| Grant date | Jan 10, 2023 |
| Priority date | — |
| Expiry date | Mar 24, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/18383
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed herein are self-mixing interferometry (SMI) sensors, such as may include vertical cavity surface emitting laser (VCSEL) diodes and resonance cavity photodetectors (RCPDs). Structures for the VCSEL diodes and RCPDs are disclosed. In some embodiments, a VCSEL diode and an RCPD are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate. In some embodiments, a first and a second VCSEL diode are laterally adjacent and formed from a common set of semiconductor layers epitaxially formed on a common substrate, and an RCPD is formed on the second VCSEL diode. In some embodiments, a VCSEL diode may include two quantum well layers, with a tunnel junction layer between them. In some embodiments, an RCPD may be vertically integrated with a VCSEL diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.