Patent · US Active

Photonics optoelectrical system

US11550099B2 · kind B2 · utility

3Cited by
67References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 19, 2019
Grant dateJan 10, 2023
Priority date
Expiry dateFeb 4, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10F30/21
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

There is set forth herein a method including building a first photonics structure using a first wafer having a first substrate, wherein the building the first photonics structure includes integrally fabricating within a first photonics dielectric stack one or more photonics device, the one or more photonics device formed on the first substrate; building a second photonics structure using a second wafer having a second substrate, wherein the building the second photonics structure includes integrally fabricating within a second photonics dielectric stack a laser stack structure active region and one or more photonics device, the second photonics dielectric stack formed on the second substrate; and bonding the first photonics structure and the second photonics structure to define an optoelectrical system having the first photonics structure bonded the second photonics structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.