Semiconductor structure and method for forming the same
US11551924B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Jul 22, 2020 |
| Grant date | Jan 10, 2023 |
| Priority date | — |
| Expiry date | Sep 25, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a semiconductor structure includes providing a substrate; forming a gate structure on the substrate, the gate structure extending along a first direction; removing a portion of the gate structure to form a trench in the gate structure, the trench penetrating through the gate structure along a second direction which is different form the first direction; performing a first cleaning treatment process on the trench to remove non-metal residues; and performing a second cleaning treatment process on the trench to remove metal residues.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.