Patent · US Active

Solution-based deposition method for preparing semiconducting thin films via dispersed particle self-assembly at a liquid-liquid interface

US11551928B2 · kind B2 · utility

0Cited by
0References
14Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 3, 2018
Grant dateJan 10, 2023
Priority date
Expiry dateAug 3, 2038

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB82Y40/00
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method for preparing a semiconducting thin film and device for carrying out the method, wherein the method includes: (1) providing a liquid-liquid interface; (2) providing at least one layered semiconductor material or its precursor(s) in the form of particles in a solvent in the form of a dispersion; (3) injecting the dispersion at the liquid-liquid interface, in order to obtain an assembly of semiconductor/semiconductor precursor particles; (4) bringing the assembly of into contact with a flexible substrate; and (5) applying a surface pressure to the dispersion to obtain a particle film of semiconductor/semiconductor precursor on the substrate, wherein the first solvent has a higher density than the second solvent.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.