Light emitting display device and manufacturing method thereof
US11552149B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 2, 2020 |
| Grant date | Jan 10, 2023 |
| Priority date | — |
| Expiry date | Nov 4, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K2101/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light emitting display device includes: a light emitting element; a second transistor connected to a scan line; a first transistor which applies a current to the light emitting element; a capacitor connected to a gate electrode of the first transistor; and a third transistor connected to an output electrode of the first transistor and the gate electrode of the first transistor. Channels of the second transistor, the first transistor, and the third transistor are disposed in a polycrystalline semiconductor layer, and a width of a channel of the third transistor is in a range of about 1 μm to about 2 μm, and a length of the channel of the third transistor is in a range of about 1 μm to about 2.5 μm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.