Semiconductor device and manufacturing method therefor
US11552164B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 9, 2019 |
| Grant date | Jan 10, 2023 |
| Priority date | — |
| Expiry date | Sep 25, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprises: a substrate; a well region provided in the substrate, having a second conductivity type; source regions having a first conductivity type; body tile regions having the second conductivity type, the source regions and the body tie regions being alternately arranged in a conductive channel width direction so as to form a first region extending along the conductive channel width direction, and a boundary where the edges of the source regions and the edges of the body tie regions are alternately arranged being formed on two sides of the first region; and a conductive auxiliary region having the first conductivity type, provided on at least one side of the first region, and directly contacting the boundary, a contact part comprising the edge of at least one source region on the boundary and the edge of at least one body tie region on the boundary.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.