Semiconductor device
US11552175B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 23, 2020 |
| Grant date | Jan 10, 2023 |
| Priority date | — |
| Expiry date | Jan 12, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/371
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type formed on the semiconductor substrate and having a first conductivity type impurity concentration higher than that of the semiconductor substrate, a second semiconductor layer of a second conductivity type formed above the first semiconductor layer, a first device region formed in the second semiconductor layer and configured to operate based on a first reference voltage, a second device region formed in the second semiconductor layer and configured to operate based on a second reference voltage, the second device region being spaced apart from the first device region, and a region isolation structure interposed between the first and second device regions and formed in a region extending from a front surface of the second semiconductor layer to the first semiconductor layer so as to electrically isolate the first and second device regions from each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.