Metal gate structures for field effect transistors
US11552178B2 · kind B2 · utility
1Cited by
3References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 5, 2020 |
| Grant date | Jan 10, 2023 |
| Priority date | — |
| Expiry date | Nov 28, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure describes a method for the formation of gate stacks having two or more titanium-aluminum (TiAl) layers with different Al concentrations (e.g., different Al/Ti ratios). For example, a gate structure can include a first TiAl layer with a first Al/Ti ratio and a second TiAl layer with a second Al/Ti ratio greater than the first Al/Ti ratio of the first TiAl layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.