Semiconductor device
US11552217B2 · kind B2 · utility
1Cited by
5References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 11, 2019 |
| Grant date | Jan 10, 2023 |
| Priority date | — |
| Expiry date | Sep 4, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/851
Abstract
A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure and a light-emitting structure. The light-emitting structure is located between the first semiconductor structure and the second semiconductor structure. The light-emitting structure includes a multiple quantum well structure. The multiple quantum well structure contains aluminum and includes a plurality of semiconductor stacks. Each of the semiconductor stacks is stacked by a well layer and a barrier layer. In each semiconductor stack, the well layer has a thickness larger than a thickness of the barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.