Optoelectronic component and method for producing an optoelectronic component
US11552228B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 17, 2018 |
| Grant date | Jan 10, 2023 |
| Priority date | — |
| Expiry date | Oct 24, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0362
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes a semiconductor chip including a plurality of pixels, each pixel configured to emit electromagnetic primary radiation from a radiation exit surface and conversion layers located on at least a part of the radiation exit surfaces, wherein the conversion layers comprise a crosslinked matrix having a three-dimensional siloxane-based network and at least one phosphor embedded in the matrix, and wherein the conversion layers have a thickness of ≤30 μm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.