Patent · US Active

Optoelectronic component and method for producing an optoelectronic component

US11552228B2 · kind B2 · utility

0Cited by
4References
19Claims
0Family size

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Key dates

Filing dateAug 17, 2018
Grant dateJan 10, 2023
Priority date
Expiry dateOct 24, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/0362
  • WIPO fieldBasic materials chemistry
  • WIPO sectorChemistry

Abstract

An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes a semiconductor chip including a plurality of pixels, each pixel configured to emit electromagnetic primary radiation from a radiation exit surface and conversion layers located on at least a part of the radiation exit surfaces, wherein the conversion layers comprise a crosslinked matrix having a three-dimensional siloxane-based network and at least one phosphor embedded in the matrix, and wherein the conversion layers have a thickness of ≤30 μm.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.