Method for producing a diode laser and diode laser
US11552453B2 · kind B2 · utility
0Cited by
4References
17Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 24, 2016 |
| Grant date | Jan 10, 2023 |
| Priority date | — |
| Expiry date | Jan 5, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/4031
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for the production of a diode laser having a laser bar, wherein a metal layer having raised areas is used which is located between the n-side of the laser bar and the cover. The metal layer can be plastically deformed during installation without volume compression in the solid physical state. As a result the laser module can be reliably installed and a slight deviation (smile value) of the emitters from a centre line is achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.