Microwave dielectric component and manufacturing method thereof

US11552617B2 · kind B2 · utility

Assignee

• Richview Electronics Co., Ltd. · CN

Inventors

• Zhijian Wang · Beijing, CN
• Honglin Song · Zhuhai, CN
• Xianglan Wu · Zhuhai, CN
• Siping Bai · Longbeilingcun, CN

Key dates

• Filing date: Mar 15, 2018
• Grant date: Jan 10, 2023
• Expiry date: Dec 17, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H05K2203/095
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A microwave dielectric component (100) comprises a microwave dielectric substrate (101) and a metal layer, the metal layer being bonded to a surface of the microwave dielectric substrate (101). The metal layer comprises a conductive seed layer and a metal thickening layer (105). The conductive seed layer comprises an ion implantation layer (103) implanted into the surface of the microwave dielectric substrate (101) and a plasma deposition layer (104) adhered on the ion implantation layer (103). The metal thickening layer (105) is adhered on the plasma deposition layer (104). A manufacturing method of the microwave dielectric component (100) is further disclosed.