Patent · US Active

Semiconductor device and method of manufacturing a semiconductor device

US11557524B2 · kind B2 · utility

2Cited by
1References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 24, 2021
Grant dateJan 17, 2023
Priority date
Expiry dateMay 24, 2041

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/18162
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

In one example, a semiconductor device can comprise (a) an electronic device comprising a device top side, a device bottom side opposite the device top side, and a device sidewall between the device top side and the device bottom side, (b) a first conductor comprising, a first conductor side section on the device sidewall, a first conductor top section on the device top side and coupled to the first conductor side section, and a first conductor bottom section coupled to the first conductor side section, and (c) a protective material covering the first conductor and the electronic device. A lower surface of the first conductor top section can be higher than the device top side, and an upper surface of the first conductor bottom section can be lower than the device top side. Other examples and related methods are also disclosed herein.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.