Semiconductor device and manufacturing method of the same
US11557604B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 18, 2020 |
| Grant date | Jan 17, 2023 |
| Priority date | — |
| Expiry date | Jul 16, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0483
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: a first gate stack including a plurality of first gate electrodes; a second gate stack arranged on the first gate stack and including a plurality of second gate electrodes; and a plurality of channel structures arranged in a plurality of channel holes penetrating the first gate stack and the second gate stack. Each of the channel holes includes a first channel hole portion penetrating the first gate stack and a second channel hole portion penetrating the second gate stack, and a ratio of a second width in the second direction to a first width in the first direction of an upper end of the first channel hole portion is less than a ratio of a fourth width in the second direction to a third width in the first direction of an upper end of the second channel hole portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.