Semiconductor device and manufacturing method thereof
US11557647B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 19, 2018 |
| Grant date | Jan 17, 2023 |
| Priority date | — |
| Expiry date | May 15, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D10/60
Abstract
A semiconductor device includes: a drift region of a first conductive type including a contact section and extension sections extending along the main surface of a substrate; column regions of a second conductive type which alternate with the extension sections in a perpendicular direction to the extension direction of the extension sections and each includes an end connecting to the contact section; a well region of a second conductive type which connects to the other end of each column region and tips of the extension sections; and electric field relaxing electrodes which are provided above at least some of residual pn junctions with an insulating film interposed therebetween. Herein, the residual pn junctions are pn junctions other than voltage holding pn junctions formed in interfaces between the extension sections and the column regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.