Semiconductor device and method for manufacturing the same
US11557674B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 27, 2018 |
| Grant date | Jan 17, 2023 |
| Priority date | — |
| Expiry date | Jul 27, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
Abstract
A semiconductor device includes: a substrate (10); a semiconductor layer (20) disposed on a main surface of this substrate (10); and a first main electrode (30) and a second main electrode (40), which are disposed on the substrate (10) separately from each other with the semiconductor layer (20) sandwiched therebetween and are individually end portions of a current path of a main current flowing in an on-state. The semiconductor layer (20) includes: a first conductivity-type drift region (21) through which a main current flows; a second conductivity-type column region (22) that is disposed inside the drift region (21) and extends in parallel to a current path; and an electric field relaxation region (23) that is disposed in at least a part between the drift region (21) and the column region (22) and is either a low-concentration region in which an impurity concentration is lower than in the same conductivity-type adjacent region or a non-doped region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.