Quantum dot structure having a barrier region and a trap region, radiation conversion element and light-emitting device
US11557686B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Aug 26, 2019 |
| Grant date | Jan 17, 2023 |
| Priority date | — |
| Expiry date | Aug 26, 2039 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2002/10
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A quantum dot structure, a radiation conversion element and a light emitting device are disclosed. In an embodiment a quantum dot structure includes an active region configured to emit radiation, a barrier region surrounding the active region and a trap region spaced apart from the active region, wherein a band edge of the trap region forms a trap configuration with respect to the barrier region for at least one type of charge carrier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.