Semiconductor light emitting device
US11557693B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2021 |
| Grant date | Jan 17, 2023 |
| Priority date | — |
| Expiry date | Jul 24, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/815
Abstract
A semiconductor light emitting device includes a multi-quantum-well structure, a first capping layer, a second capping layer, and an electron barrier layer stacked in order. The multi-quantum-well structure includes a plurality of alternately-stacked potential barrier layers and potential well layers. The first capping layer is a semiconductor layer, and the second capping layer is a p-doped semiconductor layer. Each of the first and second capping layers has an aluminum mole fraction larger than that of each of the potential barrier layers, and the aluminum mole fraction of the first capping layer is larger than that of at least a portion of the electron barrier layer. A method for preparing the semiconductor light emitting device is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.