Semiconductor device and method of fabricating the same
US11563017B2 · kind B2 · utility
0Cited by
6References
19Claims
0Family size
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Key dates
| Filing date | Nov 17, 2020 |
| Grant date | Jan 24, 2023 |
| Priority date | — |
| Expiry date | Apr 23, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/40
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device including a substrate that includes a cell array region and a peripheral circuit region; a cell transistor on the cell array region of the substrate; a peripheral transistor on the peripheral circuit region of the substrate; a first interconnection layer connected to the cell transistor; a second interconnection layer connected to the peripheral transistor; an interlayer dielectric layer covering the first interconnection layer; and a blocking layer spaced apart from the first interconnection layer, the blocking layer covering a top surface and a sidewall of the second interconnection layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.