Display panel driven by a thin film transistor including a silicon semiconductor and a thin film transistor including an oxide semiconductor
US11563069B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2020 |
| Grant date | Jan 24, 2023 |
| Priority date | — |
| Expiry date | Dec 30, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/124
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A display panel includes a substrate, a first thin film transistor including a first semiconductor layer and a first gate electrode, a data line extending in a first direction, a scan line extending in a second direction, a second thin film transistor electrically connected to the data line and including a second semiconductor layer and a second gate electrode, a third thin film transistor including a third semiconductor layer and a first upper gate electrode arranged on the third semiconductor layer, a node connection line electrically connecting the first thin film transistor and the third thin film transistor, and a shield line located between the data line and the node connection line in a plan view and including the same material as the first upper gate electrode of the third thin film transistor. The first semiconductor layer includes a silicon semiconductor, and the third semiconductor layer includes an oxide semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.