Ultra-compact inductor made of 3D Dirac semimetal
US11563078B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 12, 2020 |
| Grant date | Jan 24, 2023 |
| Priority date | — |
| Expiry date | Apr 20, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0272
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Ultra-compact inductor devices for use in integrated circuits (e.g., RF ICs) that use 3-dimensional Dirac materials for providing the inductor. Whereas inductors currently require significant real estate on an integrated circuit, because they require use of an electrically conductive winding around an insulative core, or such metal deposited in a spiral geometry, the present devices can be far more compact, occupying significantly less space on an integrated circuit. For example, an ultra-compact inductor that could be included in an integrated circuit may include a 3-dimensional Dirac material formed into a geometric shape capable of inductance (e.g., as simple as a stripe or series of stripes of such material), deposited on a substantially non-conductive (i.e., insulative) substrate, on which the Dirac material in the selected geometric shape is positioned. Low temperature manufacturing methods compatible with CMOS manufacturing are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.