Method for manufacturing IGBT device
US11563103B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 14, 2021 |
| Grant date | Jan 24, 2023 |
| Priority date | — |
| Expiry date | Apr 14, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/145
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing an IGBT device includes: forming a source of the IGBT device in a substrate, wherein the substrate is an MCZ substrate; performing annealing processing on the substrate, wherein a layer of oxide is formed on the surface of the source during an annealing process; forming an interlayer dielectric layer on the substrate, wherein the interlayer dielectric layer is comprised of a silicon nitride layer, a first type oxide layer, and a second type oxide layer, and a material used to form the first type oxide layer is different from a material used to form the second type oxide layer; and performing nitrogen annealing processing on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.