Semiconductor device and method of manufacturing the same

US11563114B2 · kind B2 · utility

Assignee

• Kabushiki Kaisha Toshiba · JP

Inventors

• Matthew David Smith · Corvallis, US
• Hiroshi Ono · Setagaya, JP
• Yosuke Kajiwara · Yokohama, JP
• Akira Mukai · Kawasaki, JP
• Masahiko Kuraguchi · Yokohama, JP

Key dates

• Filing date: Jan 26, 2021
• Grant date: Jan 24, 2023
• Expiry date: Apr 12, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

According to one embodiment, a semiconductor device includes first, second, third electrodes, a semiconductor member, and a first compound member. The third electrode is between the first and second electrodes in a first direction from the first to second electrodes. The semiconductor member includes first and second semiconductor regions. The first semiconductor region includes first, second, third, fourth, and fifth partial regions. A second direction from the first partial region to the first electrode crosses the first direction. The fourth partial region is between the first and third partial regions in the first direction. The fifth partial region is between the third and second partial regions in the first direction. The second semiconductor region includes first and second semiconductor portions. The first compound member includes first, second and third compound regions.