Light emitting device and production method and use thereof

US11563140B2 · kind B2 · utility

Assignee

• Tiajin Sanan Optoelectornics Co., Ltd. · CN

Inventors

• ChingYuan TSAI · Tianjin, CN
• Chun-Yi Wu · New Taipei, TW
• Fulong Li · Tianjin, CN
• Duxiang WANG · Xiamen, CN
• Chaoyu WU · Xiamen, CN
• Wenhao GAO · Tianjin, CN
• Xiaofeng Liu · Dallas, US
• Weihuan LI · Shanghai, CN
• Liming SHU · Tianjin, CN
• Chao Liu · Chengdu, CN

Key dates

• Filing date: Oct 29, 2020
• Grant date: Jan 24, 2023
• Expiry date: Dec 18, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/857

Abstract

A method for producing a light omitting device includes providing a substrate and forming an epitaxial structure thereon, forming first and second electrodes on a side of the epitaxial structure facing away from the substrate, and removing the substrate. The epitaxial structure includes a first-type semiconductor layer, an active layer, a second-type semiconductor layer, and an AlGaAs-based semiconductor layer formed on the substrate in a distal-to-proximal manner. The AlGaAs-based semiconductor layer has a thickness of not less than 30 μm, and is configured to support the rest of the epitaxial structure and serve as a light exiting layer. The device produced by the method is also disclosed.