Sintered body, substrate, circuit board, and manufacturing method of sintered body
US11564314B2 · kind B2 · utility
1Cited by
2References
13Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Oct 15, 2019 |
| Grant date | Jan 24, 2023 |
| Priority date | — |
| Expiry date | May 28, 2041 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2237/704
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A sintered body includes a crystal grain containing silicon nitride, and a grain boundary phase. If dielectric losses of the sintered body are measured while applying an alternating voltage to the sintered body and continuously changing a frequency of the alternating voltage from 50 Hz to 1 MHz, an average value εA of dielectric losses of the sintered body in a frequency band from 800 kHz to 1 MHz and an average value εB of dielectric losses of the sintered body in a frequency band from 100 Hz to 200 Hz satisfy an expression |εA−εB|≤0.1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.