Patent · US Active

Atomic layer etching on microdevices and nanodevices

US11565936B2 · kind B2 · utility

0Cited by
2References
17Claims
0Family size

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Key dates

Filing dateMay 25, 2017
Grant dateJan 31, 2023
Priority date
Expiry dateDec 7, 2038

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB82Y30/00
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

The present invention relates to the unexpected discovery of novel methods of preparing nanodevices and/or microdevices with predetermined patterns. In one aspect, the methods of the invention allow for engineering structures and films with continuous thickness equal to or less than 50 nm.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.