Patent · US Active

FinFET semiconductor device grouping

US11568121B2 · kind B2 · utility

1Cited by

1References

20Claims

0Family size

Assignee

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

Yi-Tzu Chen · Hsinchu, TW
Hau-Tai Shieh · Jinshanmian, TW
Che-Ju Yeh · Jiujiawei, TW

Key dates

Filing date	Apr 9, 2021
Grant date	Jan 31, 2023
Priority date	—
Expiry date	Apr 9, 2041

Classification

Technology area (CPC H)Electricity
CPC primaryH10D89/10
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A method of designing a circuit is provided. The method includes: providing a circuit; selecting a first NMOS fin field-effect transistor (FinFET) in the circuit; and replacing the first NMOS FinFET having a first fin number with a second NMOS FinFET having a second fin number and a third NMOS FinFET having a third fin number, wherein the sum of the second fin number and the third fin number is equal to the first fin number.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.