Image sensors having lower electrode structures below an organic photoelectric conversion layer
US11569298B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2020 |
| Grant date | Jan 31, 2023 |
| Priority date | — |
| Expiry date | Mar 2, 2041 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
Abstract
An image sensor includes a first substrate having a first surface and a second surface opposite to the first surface. The first substrate includes an active pixel region having a plurality of active pixels. A plurality of lower electrode structures is disposed on the second surface of the first substrate and corresponds to the plurality of active pixels. An upper electrode is disposed on the plurality of lower electrode structures. An organic photoelectric conversion layer is disposed between the plurality of lower electrode structures and the upper electrode. A second substrate is disposed on the first surface of the first substrate. A driving circuit configured to drive the plurality of active pixels is disposed on the second substrate. The plurality of lower electrode structures includes a first barrier layer, a reflective layer disposed on the first barrier layer and a second barrier layer disposed on the reflective layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.