Dielectric thin-film structure and electronic device including the same
US11569341B2 · kind B2 · utility
1Cited by
5References
26Claims
0Family size
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Key dates
| Filing date | Jun 10, 2021 |
| Grant date | Jan 31, 2023 |
| Priority date | — |
| Expiry date | Jul 24, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are dielectric thin-film structures and electronic devices including the same. The dielectric thin-film structure includes a substrate, and a dielectric layer provided on the substrate. The dielectric layer including a tetragonal crystal structure, and crystal grains including a proportion of the crystal grains preferentially oriented such that at least one of a <hk0>, <h00>, or <0k0> direction of a crystal lattice is parallel to or forms an angle of less than 45 degrees an out-of-plane orientation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.