Integrated circuit devices and methods of manufacturing the same
US11569344B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2020 |
| Grant date | Jan 31, 2023 |
| Priority date | — |
| Expiry date | Nov 27, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1089
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An integrated circuit device includes a capacitor structure, wherein the capacitor structure includes: a bottom electrode over a substrate; a supporter on a sidewall of the bottom electrode; a dielectric layer on the bottom electrode and the supporter; and a top electrode on the dielectric layer and covering the bottom electrode. The bottom electrode comprises: a base electrode layer over the substrate and extending in a first direction that is perpendicular to a top surface of the substrate, and a conductive capping layer including niobium nitride that is between a sidewall of the base electrode layer and the dielectric layer, and also between a top surface of the base electrode layer and the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.