Semiconductor device
US11569350B2 · kind B2 · utility
2Cited by
9References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 9, 2021 |
| Grant date | Jan 31, 2023 |
| Priority date | — |
| Expiry date | Aug 17, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a semiconductor device including a first active pattern that extends in a first direction on an active region of a substrate, a first source/drain pattern in a recess on an upper portion of the first active pattern, a gate electrode that runs across a first channel pattern on the upper portion of the first active pattern and extends in a second direction intersecting the first direction, and an active contact electrically connected to the first source/drain pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.