Diamond MIS transistor
US11569381B2 · kind B2 · utility
0Cited by
2References
16Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jul 18, 2018 |
| Grant date | Jan 31, 2023 |
| Priority date | — |
| Expiry date | Jul 18, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8303
Abstract
The invention relates to a deep depletion MIS transistor (100), comprising: a source region (S) and a drain region (D) made of doped semiconductor diamond of a first conductivity type; a channel region (C) made of doped semiconductor diamond of the first conductivity type, arranged between the source region and the drain region; a drift region (DR) made of doped semiconductor diamond of the first conductivity type, arranged between the channel region and the drain region; and a conductive gate (111) arranged on the channel region and separated from the channel region by a dielectric layer (113).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.