CMOS-based low-power, low-noise potentiostat circuit and its integration with an ENFM-based glucose sensor
US11571148B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 21, 2020 |
| Grant date | Feb 7, 2023 |
| Priority date | — |
| Expiry date | Jan 2, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2333/904
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present disclosure presents glucose sensing methods and systems. One such system comprises an electrospun-nanofibrous-membrane (ENFM)-based amperometric glucose sensor integrated on a silicon chip, in which the glucose sensor has a working electrode, a reference electrode, and a counter electrode, wherein the working electrode comprises an ENFM-based sensing electrode. The system further comprises a potentiostat circuit integrated on the silicon chip such that the potentiostat circuit comprises a voltage control unit to control a voltage difference between the working electrode and the reference electrode and a transimpedance amplifier to measure a current flow between the working electrode and the counter electrode, in which a strength of the current flow corresponds to an amount of glucose present in a sample of blood on the glucose sensor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.