Patent · US Active

Aluminum nitride film, method of manufacturing aluminum nitride film, and high withstand voltage component

US11572275B2 · kind B2 · utility

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11Claims
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Key dates

Filing dateJun 1, 2021
Grant dateFeb 7, 2023
Priority date
Expiry dateJul 24, 2041

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC01P2006/90
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

An aluminum nitride film includes a polycrystalline aluminum nitride. A withstand voltage of the aluminum nitride film is 100 kV/mm or more.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.