Patent · US Active

Radar based fill-level sensor

US11573115B2 · kind B2 · utility

1Cited by

0References

11Claims

0Family size

Assignee

Endress+Hauser SE+Co. KG · DE

Inventors

Winfried Mayer · Hobrechtsfelde, DE
Martin Hitzler · Dillingen/Saar, DE
Christian Waldschmidt · Renningen, DE

Key dates

Filing date	Nov 3, 2016
Grant date	Feb 7, 2023
Priority date	—
Expiry date	May 3, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH01Q9/0407
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A radar based, fill-level sensor comprising at least one semiconductor element, including at least a semiconductor chip and a chip package, in which the at least one semiconductor chip is arranged, wherein the at least one semiconductor chip has at least one coupling element, which serves as a signal gate for electromagnetic waves, preferably in the millimeter wave region, characterized in that at least one first resonator structure is arranged on a surface portion of the chip package.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.