Photonic synapse based on graphene-perovskite quantum dot for neuromorphic computing
US11574177B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Sep 14, 2020 |
| Grant date | Feb 7, 2023 |
| Priority date | — |
| Expiry date | Oct 23, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/50
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A phototransistor device to act as an artificial photonic synapse includes a substrate and a graphene source-drain channel patterned on the substrate. A perovskite quantum dot layer is formed on the graphene source-drain channel. The perovskite quantum dot layer is methylammonium lead bromide material. A method of operating the phototransistor device as an artificial photonic synapse includes applying a first fixed voltage to a gate of the phototransistor and a second fixed voltage across the graphene source-drain channel. A presynaptic signal is applied as stimuli across the graphene source-drain channel. The presynaptic signal includes one or more pulses of light or electrical voltage. A current across the graphene source-drain channel is measured to represent a postsynaptic signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.