Image sensor including transfer transistor having channel pattern on interlayered insulating layer over substrate and method of fabricating an image sensor
US11574948B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 11, 2019 |
| Grant date | Feb 7, 2023 |
| Priority date | — |
| Expiry date | Dec 11, 2039 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
Abstract
An image sensor and a method of fabricating the image sensor, the image sensor including a semiconductor substrate having a first floating diffusion region, a molding pattern over the first floating diffusion region and including an opening, a first photoelectric conversion part at a surface of the semiconductor substrate, and a first transfer transistor connecting the first photoelectric conversion part to the first floating diffusion region. The first transfer transistor includes a channel pattern in the opening and a first transfer gate electrode. The channel pattern includes an oxide semiconductor. The channel pattern also includes a sidewall portion that covers a side surface of the opening, and a center portion that extends from the sidewall portion to a region over the first transfer gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.