Semiconductor device including data storage material pattern
US11574956B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 7, 2021 |
| Grant date | Feb 7, 2023 |
| Priority date | — |
| Expiry date | Aug 7, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
A semiconductor device includes a substrate; first conductive lines extending in a first direction; second conductive lines extending in a second direction; memory cell structures between the first conductive lines and the second conductive lines; and dummy cell structures that are electrically isolated and between the first conductive lines and the second conductive lines. The memory cell structures include a data storage material pattern including a phase change material layer; and a selector material pattern overlapping the data storage material pattern in a vertical direction. The dummy cell structures include a dummy pattern including a phase change material layer. The phase change material layer of the dummy pattern includes a crystalline phase portion and an amorphous phase portion. At a cross section of the phase change material layer of the dummy pattern, an area of the crystalline phase portion is larger than an area of the amorphous phase portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.