Semiconductor device
US11574999B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 25, 2021 |
| Grant date | Feb 7, 2023 |
| Priority date | — |
| Expiry date | Aug 12, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/112
Abstract
Provided is a semiconductor device comprising an active region and an edge region, the semiconductor device comprising: a drift region of a first conductivity type provided in the semiconductor substrate; a base region of a second conductivity type provided above the drift region; a first collector region of the second conductivity type provided below the drift region in the active region; and a second collector region of the second conductivity type provided below the drift region in the edge region, wherein a doping concentration of the first collector region is higher than a doping concentration of the second collector region, wherein an area of the first collector region is of the same size as an area of the second collector region or larger than the area of the second collector region, in a top plan view.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.