Method of forming a bipolar transistor with a vertical collector contact
US11575020B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2020 |
| Grant date | Feb 7, 2023 |
| Priority date | — |
| Expiry date | Nov 20, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/64
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a bipolar transistor with a vertical collector contact requires providing a transistor comprising a plurality of epitaxial semiconductor layers on a first substrate, and providing a host substrate. A metal collector contact is patterned on the top surface of the host substrate, and the plurality of epitaxial semiconductor layers is transferred from the first substrate onto the metal collector contact on the host substrate. The first substrate is suitably the growth substrate for the plurality of epitaxial semiconductor layers. The host substrate preferably has a higher thermal conductivity than does the first substrate, which improves the heat dissipation characteristics of the transistor and allows it to operate at higher power densities. A plurality of transistors may be transferred onto a common host substrate to form a multi-finger transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.