Pentacene organic field-effect transistor with n-type semiconductor interlayer and its application

US11575093B2 · kind B2 · utility

Assignee

• Nanjing University · CN

Inventors

• Limin Kang · Nanjing, CN
• Yiru Wang · Nanjing, CN
• Jiang Yin · Montgomery, US
• Yidong Xia · Nanjing, CN
• Zhiguo Liu · Shanghai, CN

Key dates

• Filing date: Nov 24, 2020
• Grant date: Feb 7, 2023
• Expiry date: May 1, 2041

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/549

Abstract

A method for enhancing the performance of pentacene organic field-effect transistor (OFET) using n-type semiconductor interlayer: an n-type semiconductor thin film was set between the insulating layer and the polymer electret in the OFET with the structure of gate-electrode/insulating layer/polymer/pentacene/source (drain) electrode. The thickness of n-type semiconductor layer is 1˜200 nm. The induced electrons at the interface of n-type semiconductor and polymer electret lead to the reduction of the height of the hole-barrier formed at the interface of polymer and pentacene, thus effectively reducing the programming/erasing (P/E) gate voltages of pentacene OFET, adjusting the height of hole barrier at the interface of polymer and pentacene to a reasonable scope by controlling the quantity of induced electrons in n-type semiconductor layer, thus improving the performance of pentacene OFET, such as the P/E speeds, P/E endurance and retention characteristics.