Indirect laser brazing of SiC/SiC CMCs for manufacturing and repair
US11577333B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jan 16, 2020 |
| Grant date | Feb 14, 2023 |
| Priority date | — |
| Expiry date | Jun 19, 2041 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC04B2237/38
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method of connecting two CMC substrates that includes providing two substrates; placing one substrate approximate to the other substrate, such that at least a portion of the two substrates overlap and define a brazing area; placing a brazing material approximate the brazing area; defining a primary raster pattern that encompasses the brazing area and a portion of the two substrates outside the brazing area; defining a secondary raster pattern that encompasses the brazing area; allowing a laser to scan the primary raster pattern to preheat the brazing area to a temperature below the brazing material's melting point; allowing the laser to scan the secondary raster pattern to heat the brazing area to a temperature that is above the brazing material's melting point; melting and allowing the brazing material to flow within the brazing area; and cooling the brazing area to form a brazed joint connecting the two substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.