Probe card for characterizing processes of submicron semiconductor device fabrication
US11579171B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 12, 2019 |
| Grant date | Feb 14, 2023 |
| Priority date | — |
| Expiry date | Dec 5, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2027/0178
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Probe cards for probing highly-scaled integrated circuits are provided. A probe card includes a backplane and an array of probes extending from the backplane. Each of the probes includes a cantilever member and a probe tip. A first end of the cantilever member is coupled to the backplane, such that the cantilever member extends from the backplane. The probe tip extends from a second end of the cantilever member. The probes are fabricated from semiconductor materials. Each probe is configured to transmit electrical signals between the backplane and a device under test (DUT), via corresponding electrodes of the DUT. The probes are highly-scaled such that the feature size and pitch of the probes matches the highly-scaled feature size and pitch of the DUT's electrodes. The probes comprise atomic force microscopy (AFM) probes that are enhanced for increased electrical conductivity, elasticity, lifetime, and reliability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.