Method and system for online correction of junction temperatures of IGBT in photovoltaic inverter considering aging process
US11579644B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 18, 2021 |
| Grant date | Feb 14, 2023 |
| Priority date | — |
| Expiry date | Oct 18, 2041 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/56
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention discloses a method and a system for correction of the junction temperatures of an IGBT module in a photovoltaic inverter. The method includes: constructing an electrothermal coupling model of an IGBT model based on a photovoltaic inverter topology, a light radiation intensity, and an ambient temperature; selecting an IGBT collector-emitter on-state voltage drop as an aging parameter and designing an on-state voltage drop sampling circuit to ensure measurement accuracy; constructing an aging database for IGBT modules in different aging stages based on large current and small current injection methods; comparing a junction temperature value output by the electrothermal coupling model with the calibrated junction temperature value and calibrating an aging process coefficient of an electrothermal coupling model correction formula; comparing an IGBT aging monitoring value with the aging threshold to determine the aging process and selecting a corresponding aging process coefficient to ensure accuracy of junction temperature data.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.