Thin film capacitor, circuit board incorporating the same, and thin film capacitor manufacturing method
US11581148B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 2, 2021 |
| Grant date | Feb 14, 2023 |
| Priority date | — |
| Expiry date | Mar 12, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/0179
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Disclosed herein a thin film capacitor that includes a lower electrode layer, an upper electrode layer, and a dielectric layer disposed between the lower electrode layer and the upper electrode layer. The lower electrode layer includes a first metal layer positioned on a side facing the dielectric layer and a second metal layer positioned on a side facing away from the dielectric layer. The first metal layer has a first surface positioned on a side facing the second metal layer and a second surface positioned on a side facing the dielectric layer. The first surface has a surface roughness higher than that of the second surface. The second metal layer reflects a surface property of the first surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.