Integrated circuit structure
US11581227B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 26, 2021 |
| Grant date | Feb 14, 2023 |
| Priority date | — |
| Expiry date | Jul 26, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/853
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An IC structure includes a semiconductor fin, first and second gate structures, and an isolation structure. The semiconductor fin extends from a substrate. The first gate structure extends above a top surface of the semiconductor fin by a first gate height. The second gate structure is over the semiconductor fin. The isolation structure is between the first and second gate structures, and has a lower dielectric portion embedded in the semiconductor fin and an upper dielectric portion extending above the top surface of the semiconductor fin by a height that is the same as the first gate height. When viewed in a cross section taken along a longitudinal direction of the semiconductor fin, the upper dielectric portion of the isolation structure has a rectangular profile with a width greater than a bottom width of the lower dielectric portion of the isolation structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.