Transistor device with a field electrode that includes two layers
US11581409B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 16, 2021 |
| Grant date | Feb 14, 2023 |
| Priority date | — |
| Expiry date | Apr 22, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/605
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a transistor device which includes a semiconductor body having a first surface, a source region, a drift region, a body region being arranged between the source region and the drift region, a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric, and a field electrode adjacent the drift region and dielectrically insulated from the drift region by a field electrode dielectric, wherein the field electrode comprises a first layer and a second layer, wherein the first layer has a lower electrical resistance than the second layer, wherein a portion of the second layer is disposed above and directly contacts a portion of the first layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.