Method for manufacturing a lateral double-diffused metal-oxide-semiconductor (ldmos) transistor
US11581433B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 5, 2021 |
| Grant date | Feb 14, 2023 |
| Priority date | — |
| Expiry date | May 5, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0151
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device can include: a substrate having a first doping type; a first well region located in the substrate and having a second doping type, where the first well region is located at opposite sides of a first region of the substrate; a source region and a drain region located in the first region, where the source region has the second doping type, and the drain region has the second doping type; and a buried layer having the second doping type located in the substrate and below the first region, where the buried layer is incontact with the first well region, where the first region is surrounded by the buried layer and the first well region, and the first doping type is opposite to the second doping type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.