Method of facilitating straining of a semiconductor element for semiconductor fabrication, semiconductor platform obtained by the method, and optoelectronic device comprising the semiconductor platform
US11581451B2 · kind B2 · utility
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15Claims
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Key dates
| Filing date | Jun 8, 2018 |
| Grant date | Feb 14, 2023 |
| Priority date | — |
| Expiry date | Jun 8, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/826
Abstract
Disclosed is a method of facilitating straining of a semiconductor element (331) for semiconductor fabrication. In a described embodiment, the method comprises: providing a base layer (320) with the semiconductor element (331) arranged on a first base portion (321) of the base layer (320), the semiconductor element (331) being subjected to a strain relating to a characteristic of the first base portion (321); and adjusting the characteristic of the first base portion (321) to facilitate straining of the semiconductor element (331).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.